Comparative Study on the Impact of TiN and Mo Metal Gates on MOCVD-Grown HfO2 and ZrO2 High-κ Dielectrics for CMOS Technology
نویسندگان
چکیده
The reduction of the equivalent oxide thickness (EOT) of the gate oxide has emerged as one of the most difficult tasks addressing future CMOS technology. In order to overcome gate tunneling, the introduction of so-called high-κ materials will be necessary [1]. Hafnium dioxide, HfO2 [2], zirconium dioxide, ZrO2 [3], and their silicates are assumed to be the most promising candidates to fulfil the crucial demands necessary for a successful integration of high-κ dielectrics into CMOS devices.
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